BSC265N10LSF G Datasheet, Specs, Alternatives & ECAD | Infineon | PartGenie

AI summary

BSC265N10LSF G product

The BSC265N10LSF G is a 100V N-channel power MOSFET optimized for high-frequency switching and synchronous rectification in a compact PG-TDSON-8 package.

Best for

Synchronous rectification
High-frequency DC-DC converters

Avoid if

Applications requiring higher than 100V or significantly higher current

Check before use

Thermal design and gate drive voltage levels

Key specifications

Vds: 100 V
Id: 40 A
Rds(on): 26.5 mΩ

Compliance & Environment

RoHS: RoHS Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Management

Datasheet

BSC265N10LSF+G_+Rev2.06.pdf

800 KB

CAD Models

Download ECAD models for BSC265N10LSF G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS™ 2 power transistor designed for efficient power conversion, featuring low on-resistance and low gate charge.