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BSC440N10NS3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC440N10NS3 G product

BSC440N10NS3 G

MOSFETs - Single

MOSFETN-Channel100VOptiMOS

The BSC440N10NS3 G is a 100V N-channel power MOSFET from Infineon, designed for high-frequency DC-DC conversion.

Best for

  • DC-DC converters
  • High-frequency switching circuits

Avoid if

  • Applications requiring higher current or lower RDS(on) than 44mΩ

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
18 A
RDS(on)
44 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

pYYBAGLoayCAQi2lAAkSOYvA5c0999.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC440N10NS3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor optimized for high-frequency applications, featuring a 100V drain-source breakdown voltage.