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BSO110N03MS G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSO110N03MS G-HXY product

BSO110N03MS G-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOP-8

The BSO110N03MSG is a 30V N-Channel MOSFET in an SOP-8 package, optimized for battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.5W without proper cooling

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
30 V
ID
8.5 A
RDS(on)
14.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

9273b1e15fe15ca659892b901e849cd9_HXY MOSFET(华轩阳电子)&BSO110N03MS G-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSO110N03MS G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for low gate charge and low RDS(on) applications.