BSP321P H6327 Datasheet, Specs, Alternatives & ECAD | Infineon | PartGenie

AI summary

BSP321P H6327 product

The BSP321P is a P-Channel enhancement mode MOSFET designed for small-signal applications, featuring a -100V drain-source voltage and 900mΩ on-resistance in a SOT-223 package.

Best for

Small-signal switching
General purpose P-Channel applications

Avoid if

High-current power applications exceeding 1A

Check before use

Thermal resistance junction-ambient

Key specifications

VDS: -100 V
ID: -0.98 A
RDS(on): 900 mΩ
Package: SOT-223

Compliance & Environment

RoHS: Yes
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

General Purpose

Datasheet

7391e81f959b48315973c085d71f6ee0_Infineon(英飞凌)&BSP321P H6327.pdf

800 KB

CAD Models

Download ECAD models for BSP321P H6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Infineon SIPMOS P-Channel enhancement mode small-signal transistor.