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BSS308PEH6327-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS308PEH6327-ES product

BSS308PEH6327-ES

MOSFETs - Single

P-ChannelMOSFETSOT-2330V

The BSS308PEH6327-ES is a -30V P-Channel MOSFET in an SOT-23 package, designed for efficient power switching and DC-DC conversion.

Best for

  • Portable power management
  • Load switching
  • DC-DC converters

Avoid if

  • High-current applications exceeding 4A
  • Extreme temperature environments beyond 150°C

Check before use

  • Gate threshold voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(ON)
37 mΩ (typ)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

1b2785ac91763d229c73de32078d5d5a_2403071046_ElecSuper-BSS308PEH6327-ES_C21713846.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS308PEH6327-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET featuring advanced trench technology, optimized for low RDS(ON) and fast switching.