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BSS308PEH6327-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS308PEH6327-HXY product

BSS308PEH6327-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The BSS308PEH6327 is a P-Channel enhancement mode MOSFET in a SOT-23 package, designed for load switching and PWM applications.

Best for

  • Load switching
  • Battery protection

Avoid if

  • High-power applications exceeding 1.2W dissipation

Check before use

  • Thermal management on PCB

Key specifications

VDS
-30 V
ID
-4.2 A
RDS(on)
55 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

fa65c5c8eb7b085b2844111923d70d44_2309151201_HXY-MOSFET-BSS308PEH6327-HXY_C6285741.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS308PEH6327-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET utilizing advanced trench technology, rated for -30V and -4.2A.