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BSS806NEH6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS806NEH6327 product

BSS806NEH6327

MOSFETs - Single

N-ChannelMOSFETSOT-2320VLogic Level

The BSS806NE is a 20V N-channel MOSFET in a SOT-23 package, optimized for low-voltage logic-level switching.

Best for

  • Low-voltage logic switching
  • Battery-powered devices
  • Signal routing

Avoid if

  • High-voltage applications exceeding 20V
  • High-power continuous current loads

Check before use

  • Thermal footprint on PCB
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
2.3 A
RDS(on)
57 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Purpose

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS806NEH6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

3
PartDetailsMatch
NCE3416Manufacturer

NCE3416 is a Redesign Alternative for BSS806NEH6327, because Vin coverage is sufficient.

Has caveats

Design and risk insights

Questions & answers

The BSS806NE is an OptiMOS 2 N-channel enhancement mode MOSFET designed for small-signal applications, featuring a 20V drain-source rating and 2.3A current capacity.