ProjectsPricingInsights

BSS806NH6327-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS806NH6327-HXY product

BSS806NH6327-HXY

MOSFETs

MOSFETN-ChannelSOT-23

The BSS806NH6327 is a 20V, 3A N-Channel MOSFET in an SOT-23 package, designed for battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Gate drive voltage requirements

Key specifications

VDS
20 V
ID
3.0 A
RDS(ON)
53 mΩ
Package
SOT-23

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switch

Datasheet

20457eeda96c42ce3e992437c1d6a138_2401231633_HXY-MOSFET-BSS806NH6327-HXY_C20606241.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS806NH6327-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.