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BSS806NH6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS806NH6327 product

BSS806NH6327

MOSFETs - Single

MOSFETN-ChannelSOT-23Infineon

The BSS806N is a 20V N-channel small-signal MOSFET from Infineon, optimized for low-voltage logic control (1.8V) in compact SOT-23 packages.

Best for

  • Low-voltage logic switching
  • Battery-powered applications

Avoid if

  • High-voltage switching applications
  • Applications exceeding 0.5W power dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
20 V
ID
2.3 A
RDS(on)
57 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Management

Datasheet

3d96e7e88b7bb761e407afdfe8d64317_2304140030_Infineon-Technologies-BSS806NH6327_C151480.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS806NH6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel OptiMOS™ 2 small-signal MOSFET designed for enhancement mode operation, featuring ultra-logic level gate drive capability.