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BSS816NW-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS816NW-HXY product

BSS816NW-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-32320V

The BSS816NW is a 20V, 2A N-Channel MOSFET in an SOT-323 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Low-voltage load switching

Avoid if

  • High-power applications exceeding 0.3W dissipation

Check before use

  • Thermal dissipation on the PCB

Key specifications

VDS
20V
ID
2A
RDS(on)
55mΩ (at 4.5V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementGeneral Switching

Datasheet

6505b17f83a8c981e0124f978091a06b_2403261736_HXY-MOSFET-BSS816NW-HXY_C22366683.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS816NW-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching at low gate voltages (down to 2.5V).