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BSS816NWH6327XTSA1-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS816NWH6327XTSA1-HXY product

BSS816NWH6327XTSA1-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-32320V

The BSS816NWH6327XTSA1 is a 20V, 2A N-Channel MOSFET in an SOT-323 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-power applications exceeding 0.3W dissipation

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
2 A
RDS(ON)
55 mΩ (at 4.5V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switch

Datasheet

b19af8dd4576a36d2c58c81b42e7caed_2403261736_HXY-MOSFET-BSS816NWH6327XTSA1-HXY_C22366684.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS816NWH6327XTSA1-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage switching applications, featuring advanced trench technology.