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BSS84LT1G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSS84LT1G-HXY product

BSS84LT1G-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The BSS84LT1G is a P-channel enhancement mode MOSFET in a SOT-23 package, suitable for low-power switching and DC-DC conversion.

Best for

  • Low-power switching
  • Signal routing

Avoid if

  • High-current power stages

Check before use

  • Gate drive voltage levels

Key specifications

VDS
-50 V
ID
-0.13 A
RDS(on)
<5 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

31fd1de784ba2f1e474e6220dbec1bbf_2305231118_HXY-MOSFET-BSS84LT1G-HXY_C6285750.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSS84LT1G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET utilizing trench technology, housed in a compact SOT-23 package.