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BSZ12DN20NS3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSZ12DN20NS3 G product

BSZ12DN20NS3 G

MOSFETs - Single

MOSFETN-Channel200VInfineon

The BSZ12DN20NS3 G is a 200V N-channel power MOSFET in a compact PG-TSDSON-8 package, designed for high-efficiency DC-DC conversion.

Best for

  • DC-DC converters
  • Power switching

Avoid if

  • Applications requiring very high continuous current beyond 11A

Check before use

  • Thermal dissipation capabilities of the PCB

Key specifications

Vds
200 V
Id
11.3 A
Rds(on)
125 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

83cc7c99d75bb67ccb2773362110169e_Infineon(英飞凌)&BSZ12DN20NS3 G.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSZ12DN20NS3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor from Infineon, optimized for DC-DC conversion applications.