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BSZ160N10NS3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSZ160N10NS3G product

BSZ160N10NS3G

MOSFETs - Single

MOSFETPower Transistor100V

The BSZ160N10NS3 G is a 100V N-channel power MOSFET optimized for high-frequency DC/DC conversion.

Best for

  • DC/DC converters
  • High-frequency switching

Avoid if

  • Applications requiring extremely low gate charge or different voltage ratings.

Check before use

  • Thermal design and gate drive voltage levels.

Key specifications

VDS
100 V
ID
40 A
RDS(on)
16 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

poYBAGLnAi-ASPGWAAem9hu4C1g098.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSZ160N10NS3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power MOSFET from Infineon, designed for high-efficiency power management.