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BSZ900N20NS3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSZ900N20NS3GATMA1 product

BSZ900N20NS3GATMA1

MOSFETs - Single

MOSFETN-Channel200VPower Transistor

The BSZ900N20NS3G is a 200V N-channel power MOSFET in a compact PG-TSDSON-8 package, optimized for high-efficiency DC-DC conversion.

Best for

  • DC-DC power conversion

Avoid if

  • Applications requiring extremely high continuous current beyond 15A without adequate cooling

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
200 V
ID
15.2 A
RDS(on)
90 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

596010.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSZ900N20NS3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor designed for high-performance power conversion applications.