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BUK6607-55C,118 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BUK6607-55C,118 product

BUK6607-55C,118

MOSFETs - Single

AutomotiveMOSFETN-ChannelTrenchMOS

The BUK6607-55C is an AEC-Q101 qualified N-channel TrenchMOS FET designed for high-performance automotive applications, featuring a 55V drain-source voltage and 100A continuous current rating.

Best for

  • Automotive 12V/24V systems
  • Power switching
  • Motor control

Avoid if

  • Applications requiring extremely low gate charge or very small form factors

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
55 V
ID
100 A
RDS(on)
6.5 mOhm
Operating Temp
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

AutomotivePower Switching

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BUK6607-55C,118: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOS technology, qualified for automotive use.