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BUK7Y07-30B-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BUK7Y07-30B-HXY product

BUK7Y07-30B-HXY

MOSFETs - Single

MOSFETN-ChannelPower Management

The BUK7Y07-30B is a 30V, 80A N-Channel MOSFET in a DFN5X6-8L package, optimized for low RDS(ON) and efficient switching in power management applications.

Best for

  • Battery protection circuits
  • Load switching
  • Uninterruptible power supplies (UPS)

Avoid if

  • Applications requiring voltages significantly above 30V
  • Extremely high-temperature environments exceeding 150°C

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
80 A
RDS(ON)
4.7 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

5b994772c61624c9b1e6d96bc2de50be_2403261506_HXY-MOSFET-BUK7Y07-30B-HXY_C22367530.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BUK7Y07-30B-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed using advanced trench technology, providing low on-resistance and efficient switching performance.