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BUT11AFTU AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BUT11AFTU product

BUT11AFTU

Transistors - Bipolar (BJT) - Single

NPNPower Transistor450VTO-220F

The BUT11AFTU is a high-voltage NPN power transistor optimized for switching applications, featuring a 450V collector-emitter rating and 5A current capacity in an isolated TO-220F package.

Best for

  • High-voltage power switching
  • Industrial power supplies

Avoid if

  • Applications requiring high-frequency switching beyond the device's rated fall time

Check before use

  • Thermal dissipation requirements
  • Peak pulse current limits

Key specifications

VCEO
450 V
IC (Continuous)
5 A
Power Dissipation
40 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power SwitchingIndustrial

Datasheet

Fairchild-Semiconductor-company-11.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BUT11AFTU: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BUT11AFTU is an NPN silicon power transistor designed for high-voltage switching applications, capable of handling up to 450V and 5A.