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C2M0080120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

C2M0080120D product

C2M0080120D

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The C2M0080120D is a high-performance 1200V SiC N-Channel MOSFET designed for high-efficiency power conversion applications.

Best for

  • High-voltage power supplies
  • Renewable energy inverters

Avoid if

  • Low-voltage, cost-sensitive consumer electronics

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vds
1200 V
Id
36 A
Rds(on)
80 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

788343f5d9bb287ed16ae86b3cf6d325_2403211444_FUXINSEMI-C2M0080120D_C22365189.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for C2M0080120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET featuring high blocking voltage (1200V) and low on-resistance (80 mΩ).