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CI02S120E3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI02S120E3 product

CI02S120E3

Diodes - Rectifiers - Single

SiC Diode1200VSchottky

The CI02S120E3 is a 1200V SiC Schottky diode optimized for high-efficiency power conversion.

Best for

  • PFC stages
  • DC/DC converters
  • Inverter free-wheeling

Avoid if

  • Low-voltage applications where standard silicon diodes are sufficient

Check before use

  • Thermal design
  • Peak surge current limits

Key specifications

VRRM
1200 V
IF (25°C)
10 A
VF (2A, 25°C)
1.4 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial Inverters

Datasheet

07af2398a22949a927a2b25074e81608_2207221730_Tokmas-CI02S120E3_C967720.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI02S120E3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky Barrier Diode, designed for high-frequency, high-efficiency power applications.