CI04S65E3 Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI04S65E3 product

The CI04S65E3 is a 650V, 4A Silicon Carbide (SiC) Schottky Barrier Diode in a TO-252-2 package, ideal for high-efficiency power conversion.

Best for

PFC Boost stages
SMPS
Inverter free-wheeling

Avoid if

Applications requiring extremely low cost where standard silicon diodes suffice

Check before use

Thermal resistance and heat sinking requirements

Key specifications

Vr (Max): 650 V
If (Max): 4 A
Vf (Typ): 1.4 V

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power SuppliesIndustrial Inverters

Datasheet

4487d0f52c477e7cbf58bb23e9ad5b29_2111091530_Tokmas-CI04S65E3_C967703.pdf

800 KB

CAD Models

Download ECAD models for CI04S65E3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V SiC Schottky barrier diode optimized for high-frequency power applications like PFC boost stages and DC/DC converters.