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CI08S65E3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI08S65E3 product

CI08S65E3

Diodes - Rectifiers - Single

SiCSchottky650VTO-252

The CI08S65E3 is a 650V, 8A SiC Schottky diode in a TO-252 package, ideal for high-efficiency power conversion.

Best for

  • SMPS
  • PFC stages
  • Inverter free-wheeling

Avoid if

  • Applications requiring extremely low cost where standard silicon diodes suffice.

Check before use

  • Thermal derating curves for your operating temperature.

Key specifications

Vr (Max)
650 V
If (Max)
8 A
Vf (Max)
1.8 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

945ba2ffb5cfaa71eac7afc3dd7fc87e_2111091230_Tokmas-CI08S65E3_C967708.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI08S65E3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V Silicon Carbide (SiC) Schottky barrier diode designed for high-frequency power electronics.