CI10S120D Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI10S120D product

The CI10S120D is a 1200V SiC Schottky Barrier Diode optimized for high-efficiency, high-frequency power conversion.

Best for

Switch Mode Power Supplies
PFC stages
Inverter free-wheeling

Avoid if

Low-voltage applications where standard silicon diodes are sufficient

Check before use

Thermal design
Peak surge current limits

Key specifications

Reverse Voltage: 1200 V
Continuous Forward Current: 10 A - 45 A
Junction Temperature: +175 °C

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial Inverters

Datasheet

56552448d3890e9ad6778c3ad33ca0c6_2111091230_Tokmas-CI10S120D_C967713.pdf

800 KB

CAD Models

Download ECAD models for CI10S120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky Barrier Diode in a TO-252 package, designed for high-efficiency power electronics.