CI10S120M3 Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI10S120M3 product

The CI10S120M3 is a high-performance 1200V, 10A SiC Schottky diode in a TO-263 package, ideal for high-frequency power conversion.

Best for

Solar Inverters
PFC Boost Stages
SMPS

Avoid if

Low-voltage applications where standard silicon diodes are sufficient.

Check before use

Thermal resistance and PCB heat dissipation capabilities.

Key specifications

Reverse Voltage: 1200 V
Forward Current: 10 A
Package: TO-263

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial

Datasheet

2f3cfd8c7c7051ad4917c34513e95585_2012171205_Tokmas-CI10S120M3_C967724.pdf

800 KB

CAD Models

Download ECAD models for CI10S120M3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky Barrier Diode designed for high-efficiency, high-frequency power electronics.