CI10S65 Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI10S65 product

The CI10S65 is a 650V, 10A Silicon Carbide (SiC) Schottky Barrier Diode in a TO-220-2 package, optimized for high-efficiency power conversion.

Best for

Power Factor Correction (PFC)
Switch-mode power supplies
Motor drives

Avoid if

Applications requiring extremely low-cost silicon diodes where efficiency gains do not justify the SiC cost.

Check before use

Thermal management design
Peak surge current ratings

Key specifications

Reverse Voltage: 650 V
Forward Current: 10 A
Operating Temp: -55°C to +175°C

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power SuppliesMotor Drives

Datasheet

a4dda0828f1df304b913d3da3217f3e5_2012151235_Tokmas-CI10S65_C967710.pdf

800 KB

CAD Models

Download ECAD models for CI10S65: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The CI10S65 is a SiC Schottky Barrier Diode rated for 650V and 10A, designed for high-frequency, high-efficiency power electronics.