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CI10S65C3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI10S65C3 product

CI10S65C3

Diodes - Rectifiers - Single

SiC DiodeSchottky650VTO-220

The CI10S65C3 is a 650V, 10A Silicon Carbide (SiC) Schottky Barrier Diode designed for high-efficiency power applications.

Best for

  • Switch Mode Power Supplies
  • Power Factor Correction
  • Motor Drives

Avoid if

  • Applications requiring extremely low-cost silicon diodes where SiC performance benefits are not needed.

Check before use

  • Thermal resistance and heat sink requirements.

Key specifications

Reverse Voltage
650 V
Forward Current
10 A
Forward Voltage
1.6 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesMotor Drives

Datasheet

6c8da7439a43442e00682cc8e247e531_2012151235_Tokmas-CI10S65C3_C967711.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI10S65C3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V SiC Schottky Barrier Diode in a TO-220-2 package, optimized for high-frequency switching and efficiency.