CI20S120C3 Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI20S120C3 product

The CI20S120C3 is a 1200V, 20A Silicon Carbide (SiC) Schottky diode in a TO-220-2 package, optimized for high-efficiency, high-frequency power conversion.

Best for

Switch Mode Power Supplies
PFC stages
Inverter free-wheeling

Avoid if

Applications requiring low-cost silicon rectifiers where efficiency is not a priority.

Check before use

Thermal resistance and junction temperature limits.

Key specifications

Vr (Max): 1200 V
If (Max): 20 A
Vf (Max): 1.6 V

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial

Datasheet

f5f24a3d2454b86c0e42bf214e65aff3_2112031830_Tokmas-CI20S120C3_C2925937.pdf

800 KB

CAD Models

Download ECAD models for CI20S120C3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V SiC Schottky barrier diode designed for high-efficiency power electronics, featuring zero reverse recovery current.