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CI20S120D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI20S120D3 product

CI20S120D3

Diodes - Rectifiers - Single

SiCSchottky1200VTO-247

The CI20S120D3 is a 1200V, 20A SiC Schottky Barrier Diode in a TO-247-3 package, optimized for high-efficiency, high-frequency power conversion.

Best for

  • High-frequency power conversion
  • PFC stages
  • Inverter designs

Avoid if

  • Low-voltage applications where standard silicon diodes are sufficient

Check before use

  • Thermal resistance and heatsink requirements

Key specifications

Reverse Voltage
1200 V
Forward Current
20 A
Max Junction Temp
175°C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

569e8a4610e310268e2cab133e293896_2012151235_Tokmas-CI20S120D3_C967729.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI20S120D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) Schottky Barrier Diode rated for 1200V and 20A, designed for high-efficiency power electronics.