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CI20S65D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI20S65D3 product

CI20S65D3

Diodes - Rectifiers - Single

SiCSchottky650VTO-247

The CI20S65D3 is a 650V Silicon Carbide (SiC) Schottky Barrier Diode designed for high-efficiency power conversion applications.

Best for

  • High-frequency power supplies
  • PFC stages

Avoid if

  • Low-cost, low-efficiency designs where standard silicon diodes suffice

Check before use

  • Thermal resistance and heat sink requirements

Key specifications

Reverse Voltage
650 V
Forward Current (Per Leg)
27.5 A
Max Junction Temp
175 °C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

460502efcc7f322cace1cc1ab8c2e2eb_2012151235_Tokmas-CI20S65D3_C967714.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI20S65D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V SiC Schottky diode featuring zero reverse recovery current, making it ideal for high-frequency switching.