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CI30N120SM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI30N120SM product

CI30N120SM

MOSFETs - Single

SiC MOSFET1200VTO-247

The CI30N120SM is a 1200V SiC N-Channel MOSFET optimized for high-voltage, high-efficiency power applications.

Best for

  • Solar Inverters
  • High-Voltage DC/DC Converters
  • Motor Drives

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

Vds
1200 V
Id
31 A
Rds(on)
80 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

ceb5e99e4cf58e81af6f88455c8e447b_2211231001_Tokmas-CI30N120SM_C967734.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI30N120SM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) N-Channel MOSFET in a TO-247-3 package, designed for high-speed switching and high-voltage power conversion.