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CI30N120SM4 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI30N120SM4 product

CI30N120SM4

MOSFETs - Single

SiC MOSFET1200VPower Transistor

The CI30N120SM4 is a high-performance 1200V N-Channel SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • Solar inverters
  • High-voltage DC/DC converters
  • Switch mode power supplies

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vdss
1200 V
Rds(on)
80 mΩ
Id
28 A

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

d0822e8add4498a792d30d4e929c18df_2306141014_Tokmas-CI30N120SM4_C7420433.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI30N120SM4: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V N-Channel Silicon Carbide (SiC) Power MOSFET designed for high-efficiency, high-frequency power electronics applications.