CI30S65D3L2 Datasheet, Specs, Alternatives & ECAD | Tokmas | PartGenie

AI summary

CI30S65D3L2 product

The CI30S65D3L2 is a 650V SiC Schottky diode optimized for high-efficiency power conversion.

Best for

EV chargers
Power inverters
Motor drives

Avoid if

Low-cost, low-efficiency applications where standard silicon diodes suffice.

Check before use

Thermal dissipation requirements and mounting torque specifications.

Key specifications

Reverse Voltage: 650 V
Forward Current: 30 A
Junction Temp: 175 °C

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial Drives

Datasheet

c3cd6d8927a45711692a8fc0659484f0_2012151235_Tokmas-CI30S65D3L2_C967717.pdf

800 KB

CAD Models

Download ECAD models for CI30S65D3L2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V Silicon Carbide (SiC) Schottky Barrier Diode in a TO-247 package, designed for high-efficiency switching applications.