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CI60N120SM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI60N120SM product

CI60N120SM

MOSFETs - Single

SiC MOSFET1200VHigh Power

The CI60N120SM is a 1200V, 60A Silicon Carbide (SiC) N-Channel MOSFET designed for high-efficiency power conversion applications.

Best for

  • High-efficiency power conversion
  • Solar energy systems
  • Industrial motor control

Avoid if

  • Low-voltage applications where standard Si MOSFETs are more cost-effective

Check before use

  • Gate drive circuitry compatibility
  • Thermal design

Key specifications

Vdss
1200 V
Id
60 A
Rds(on)
40 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

fd805fe0854347cc66206f33d2c3a86a_2112091430_Tokmas-CI60N120SM_C967735.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI60N120SM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage SiC MOSFET capable of handling 1200V and 60A, optimized for high-speed switching and low on-resistance.