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CI7N170SM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI7N170SM product

CI7N170SM

MOSFETs - Single

SiC MOSFET1700VPower MOSFET

The CI7N170SM is a 1700V N-Channel Silicon Carbide MOSFET designed for high-voltage power conversion applications.

Best for

  • Auxiliary power supplies
  • High-voltage switch mode power supplies

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal resistance (RθJC)

Key specifications

VDS
1700 V
RDS(on)
650 mΩ
ID
7.0 A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Supplies

Datasheet

9fc1cbb356d2d1ac21e7085df72c2efa.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI7N170SM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-Channel Silicon Carbide (SiC) power MOSFET rated for 1700V and 7A, optimized for high-efficiency power switching.