ProjectsPricingInsights

CI90N120SM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CI90N120SM product

CI90N120SM

MOSFETs - Single

SiC MOSFET1200VHigh Power

The CI90N120SM is a 1200V, 90A SiC MOSFET in a TO-247-3 package, optimized for high-efficiency power conversion applications.

Best for

  • Solar Inverters
  • High-voltage DC/DC converters
  • Industrial power supplies

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

VDS
1200 V
ID
90 A
RDS(on)
27 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

1bcffb970b469dd3f3669402079a3604_2303011000_Tokmas-CI90N120SM_C5364636.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CI90N120SM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) power MOSFET with a 1200V breakdown voltage and 90A current rating, designed for high-efficiency switching.