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CID10N65F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CID10N65F product

CID10N65F

MOSFETs - Single

GaNPower Transistor650VTO220F

The CID10N65F is a 650V GaN-on-Silicon enhancement-mode power transistor in a TO220F-3L package, optimized for high-frequency, high-efficiency power conversion.

Best for

  • High-frequency power conversion
  • Totem pole PFC
  • Compact power supplies

Avoid if

  • Applications requiring high gate threshold voltage
  • Designs where TO220F footprint is too large

Check before use

  • Gate drive voltage levels
  • Thermal resistance (RthJC)

Key specifications

VDS
650 V
RDS(on)
200 mΩ
ID
10 A
QG
2.3 nC

Compliance & Environment

RoHS
Yes
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

6f4e7f55c45fb43ff4509252ef3d2f57_2405291417_Tokmas-CID10N65F_C22446732.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CID10N65F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V GaN-on-Silicon enhancement-mode power transistor designed for high-efficiency power switching applications.