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CID9N65E3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CID9N65E3 product

CID9N65E3

MOSFETs - Single

GaNPower Transistor650V

The CID9N65E3 is a 650V GaN enhancement-mode power transistor optimized for high-frequency, high-efficiency power conversion.

Best for

  • AC-DC converters
  • DC-DC converters
  • Totem pole PFC

Avoid if

  • Applications requiring high-current continuous operation beyond 4.8A

Check before use

  • Gate drive voltage levels and ESD protection

Key specifications

VDS (Max)
650 V
RDS(on) (Max)
480 mΩ
Qg (Typ)
1.2 nC

Compliance & Environment

RoHS
Yes
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

6622ca1a9ad17dcb325bf48d52e43b59_2405291417_Tokmas-CID9N65E3_C22446729.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CID9N65E3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a normally-OFF GaN enhancement-mode power transistor designed for high-efficiency power conversion applications.