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CSD17577Q3A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CSD17577Q3A-HXY product

CSD17577Q3A-HXY

MOSFETs - Single

N-ChannelMOSFET30VDFN3X3-8L

The CSD17577Q3A is a 30V N-Channel MOSFET in a DFN3X3-8L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring high-voltage isolation or extreme temperature environments beyond 150°C.

Check before use

  • Thermal design on the PCB to handle power dissipation.

Key specifications

VDS
30 V
ID
60 A
RDS(ON)
5.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

87047456576345cdf1901cfbeffc8c7b_2403261742_HXY-MOSFET-CSD17577Q3A-HXY_C22367294.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CSD17577Q3A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology, designed for efficient switching and battery protection.