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CUS08F30,H3F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CUS08F30,H3F product

CUS08F30,H3F

Diodes - Rectifiers - Single

Schottky Diode30V800mAUSC Package

The CUS08F30 is a 30V, 800mA Schottky barrier diode in a compact USC package, ideal for high-speed switching.

Best for

  • High-speed switching
  • General-purpose rectification in compact designs

Avoid if

  • Applications exceeding 30V or 800mA
  • Extreme high-temperature environments without adequate thermal management

Check before use

  • Thermal design calculations
  • Reverse leakage current at operating temperature

Key specifications

Reverse Voltage
30 V
Forward Current
800 mA
Forward Voltage (Typ)
0.40 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-Speed SwitchingGeneral Rectification

Datasheet

e5093bde9b032889913c348a54908e08_docget.jsp.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for CUS08F30,H3F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

2
PartDetailsMatch
SS14MDD

SS14 is a 40V 1A Schottky option only if the board can change to SMA.

Needs validation

Design and risk insights

Questions & answers

The CUS08F30 is a silicon epitaxial Schottky barrier diode from Toshiba, designed for high-speed switching applications.