CUS10S30,H3F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

CUS10S30,H3F product

CUS10S30,H3F

Diodes - Rectifiers - Single

Schottky Diode30V1ASurface Mount

The CUS10S30 is a 30V, 1A Schottky barrier diode in a compact USC package, ideal for high-speed switching.

Best for

  • High-speed switching
  • Compact power rectification

Avoid if

  • Operating at extreme high temperatures without adequate thermal management

Check before use

  • Reverse leakage current at operating temperature

Key specifications

Peak Reverse Voltage
30 V
Average Rectified Current
1 A
Forward Voltage (1A)
0.37 V
Package
USC

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080

Application

High-Speed SwitchingGeneral Rectification

CAD Models

Download ECAD models for CUS10S30,H3F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

6
PartDetailsMatch
SS34AYangzhou Yangjie Electronic Technology Co.,Ltd

SS34A is a higher-rated Schottky option for redesign, not a pin replacement.

Needs validation

Design and risk insights

Questions & answers

The CUS10S30 is a silicon epitaxial Schottky barrier diode from Toshiba, designed for high-speed switching applications.