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DB006NG-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DB006NG-B product

DB006NG-B

FETs

N-channel MOSFET20 V60 A6.5 mΩTO-252low gate charge

DB006NG-B is a 20 V N-channel TO-252 MOSFET for low-voltage, high-current switching. It is specified for 60 A continuous drain current at TC=25°C and 6.5 mΩ maximum RDS(on) with a 4.5 V gate drive.

Best for

  • Low-voltage power switching
  • Applications with 4.5 V gate drive
  • Compact TO-252 power stages

Avoid if

  • Drain-source voltage can exceed 20 V including transients
  • A qualified automotive or compliance status is required without further evidence

Check before use

  • VDS transient margin
  • Thermal path from TO-252 tab to PCB or heatsink
  • RDS(on) at the actual gate voltage and operating temperature

Key specifications

Drain-source voltage
20 V
Continuous drain current
60 A at TC=25°C
Maximum RDS(on)
6.5 mΩ at VGS=4.5 V, ID=25 A
Package
TO-252, 3-pin

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switchingDC-DC converter switching

Datasheet

4cd6d07a685bd721dbe484a8acba5136_DB006NG-B.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DB006NG-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DB006NG-B is a DOINGTER N-channel trench MOSFET supplied in a 3-pin TO-252 package. It has a 20 V drain-source rating and is intended for low-voltage switching applications.