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DC004NG-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DC004NG-B product

DC004NG-B

MOSFETs - Single

N-channel MOSFET30 VTO-252low RDS(on)power switching

DC004NG-B is a 30 V N-channel TO-252 MOSFET for low-voltage, high-current switching, with 4 mΩ maximum RDS(on) specified at 10 V gate drive.

Best for

  • 30 V power switching
  • Low-voltage DC-DC stages
  • High-current load switching

Avoid if

  • A verified compliance status is required
  • The PCB footprint cannot accommodate the verified TO-252 outline
  • Gate drive is substantially below 4.5 V

Check before use

  • Confirm RDS(on) at the actual gate-drive voltage and operating temperature
  • Validate heatsinking and board copper for dissipation
  • Verify package dimensions against the received part

Key specifications

Drain-source voltage
30 V
Continuous drain current
100 A at TC=25°C
RDS(on), maximum
4 mΩ at VGS=10 V, ID=24 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC-DC convertersMotor and load control

Datasheet

a7fdea20ab3ddcd4a3429561ba533f5b_DC004NG-B.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DC004NG-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DC004NG-B is a DOINGTER 30 V N-channel trench power MOSFET in a 3-pin TO-252 package. It is specified with 4 mΩ maximum drain-source on-resistance at VGS=10 V and ID=24 A.