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DC010NG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DC010NG product

DC010NG

FETs

N-channel MOSFET30 VTO-252Low RDS(on)Power switching

DC010NG is a 30 V N-channel TO-252 MOSFET for low-voltage power switching, with 10 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage power switching with a 10 V gate driver
  • Compact TO-252 power stages
  • Applications needing low RDS(on)

Avoid if

  • Drain-source voltage can exceed 30 V including transients
  • Thermal design cannot support high current dissipation
  • Compliance or lifecycle status must be confirmed from current supplier records

Check before use

  • Maximum VDS transient voltage
  • RDS(on) at actual gate-drive voltage and temperature
  • PCB and heatsink thermal path
  • Current distributor lifecycle and compliance data

Key specifications

Drain-source voltage
30 V
Continuous drain current
55 A at TC=25°C
RDS(on)
10 mΩ max at VGS=10 V, ID=30 A
Total gate charge
9.8 nC typical
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC-DC converter switchingLow-voltage motor or load switchingGeneral power control

Datasheet

28e97fb69836f867af2979fbc3204662_DC010NG.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DC010NG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DC010NG is a DOINGTER N-channel trench power MOSFET in a TO-252 package. It is rated for 30 V drain-source voltage and 55 A continuous drain current at a 25°C case temperature.