DC015P2G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DC015P2G product

DC015P2G

FETs

P-channel MOSFET-30 V-40 ATO-25214.5 mΩPower switching

DC015P2G is a -30 V P-channel TO-252 MOSFET for power-path and load-switching use, with 14.5 mΩ maximum RDS(on) at -10 V gate drive.

Best for

  • Low-side or high-side P-channel switching within -30 V systems
  • Power-path control
  • Battery and DC load switching

Avoid if

  • Drain-source voltage can exceed -30 V including transients
  • A verified compliance or lifecycle declaration is mandatory
  • The design cannot provide adequate thermal copper for TO-252

Check before use

  • Confirm gate-source voltage remains within ±25 V
  • Calculate conduction loss at the actual gate-drive voltage
  • Confirm TO-252 land pattern and G-D-S pinout
  • Assess transient and avalanche conditions

Key specifications

MOSFET polarity
P-channel
Drain-source voltage
-30 V
Continuous drain current
-40 A at TC = 25 °C
Maximum on-resistance
14.5 mΩ at VGS = -10 V, ID = -10 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC power switchingLoad switchingBattery-powered equipment

CAD Models

Download ECAD models for DC015P2G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DC015P2G is a DOINGTER P-channel trench MOSFET in a 3-pin TO-252 package. Its drain-source voltage rating is -30 V and its continuous drain-current rating is -40 A at TC = 25 °C.