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DE036NG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DE036NG product

DE036NG

MOSFETs - Single

N-channel MOSFET60 V20 ATO-25236 mΩ

DE036NG is a 60 V N-channel TO-252 MOSFET for low-side or general power switching, with 36 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • 60 V power switching
  • Low-side switching
  • Compact TO-252 power stages

Avoid if

  • A verified compliance status is required
  • Package dimensions or detailed thermal board data are required before design release
  • The circuit requires a MOSFET rated above 60 V

Check before use

  • Use the 36 mΩ maximum RDS(on) only for VGS=10 V and ID=10 A conditions.
  • Derate drain current for case temperature and actual thermal resistance.
  • Check avalanche, diode-recovery, and switching stress against the application waveform.

Key specifications

Drain-source voltage
60 V
Continuous drain current
20 A at TC=25°C
RDS(on)
36 mΩ max at VGS=10 V, ID=10 A
Package
TO-252
Gate charge
20.3 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switchingDC power control

Datasheet

f443766dc3674096d8869f715c11166d_DE036NG.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DE036NG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DE036NG is a DOINGTER N-channel trench MOSFET supplied in a TO-252 package. It has a 60 V drain-source rating and a 20 A continuous drain-current rating at TC=25°C.