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DE090PG-S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DE090PG-S product

DE090PG-S

FETs

P-channel MOSFET-60 V-13 A90 mΩTO-252Power switching

DE090PG-S is a -60 V P-channel TO-252 MOSFET rated for -13 A continuous drain current, with 90 mΩ maximum RDS(on) at -10 V gate drive.

Best for

  • P-channel high-side switching within a -60 V drain-source rating
  • Power-load switching where TO-252 thermal performance is suitable

Avoid if

  • A lower-loss MOSFET is required at only -4.5 V gate drive
  • Compliance or lifecycle documentation is mandatory and cannot be separately verified

Check before use

  • Use the specified VGS and ID conditions when estimating RDS(on) loss
  • Keep VGS within the ±20 V absolute maximum rating
  • Confirm pin 1 gate, pin 2 drain, and pin 3 source
  • Confirm which of the two datasheet TO-252 outline variants applies

Key specifications

MOSFET type
P-Channel
Drain-source voltage
-60 V
Continuous drain current
-13 A at TC = 25°C
On-resistance
90 mΩ max at VGS = -10 V, ID = -10 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-side power switchingLoad switching

Datasheet

218ee978d6a95cc0d09e4a494e5d6186_DE090PG-S.pdf

800 KB

Datasheet AI

CAD Models

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DE090PG-S is a DOINGTER P-channel trench MOSFET in a 3-pin TO-252 package. Its drain-source voltage rating is -60 V and its continuous drain-current rating is -13 A at TC = 25°C.