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DG636EEN-T1-GE4 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DG636EEN-T1-GE4 product

DG636EEN-T1-GE4

Multiplexers

Analog SwitchSPDTCMOSLow Leakage

The DG636EEN-T1-GE4 is a high-precision dual SPDT CMOS analog switch optimized for low charge injection and low leakage applications.

Best for

  • Data acquisition
  • Medical instrumentation
  • Precision signal routing

Avoid if

  • High-power switching applications exceeding 30 mA

Check before use

  • Thermal derating requirements above 70 °C

Key specifications

Charge Injection
0.3 pC
Bandwidth
700 MHz
On-Resistance
63 Ohm (typ)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

IndustrialMedical

Datasheet

Vishay-company-15.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DG636EEN-T1-GE4: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual SPDT CMOS analog switch designed for high-precision signal switching, featuring ultralow charge injection and low leakage current.