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DGD0211CWT-7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DGD0211CWT-7 product

DGD0211CWT-7

Gate Drivers

Gate DriverLow-SideHigh-Speed

The DGD0211C is a high-speed, low-side gate driver for MOSFETs and IGBTs, ideal for power management applications requiring fast switching.

Best for

  • High-speed switching
  • Compact power designs

Avoid if

  • High-side driving requirements
  • Current requirements > 2A

Check before use

  • Gate charge of the power switch
  • Thermal dissipation in TSOT25 package

Key specifications

Supply Voltage
4.5V - 18V
Peak Current
1.9A Source / 1.8A Sink
Propagation Delay
35ns
Package
TSOT25

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8542.39.0001

Application

Power ManagementMotor Control

Datasheet

eb0f5e73c26c16622d3cc1e5e76049be_2203222030_Diodes-Incorporated-DGD0211CWT-7_C2983695.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DGD0211CWT-7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single-channel, high-speed low-side gate driver capable of driving MOSFETs and IGBTs with up to 1.9A peak current.