DH090NG-S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DH090NG-S product

DH090NG-S

FETs

N-channel MOSFET100 V15 ATO-252trench MOSFETpower switching

DH090NG-S is a 100 V N-channel TO-252 power MOSFET rated for 15 A continuous current, with 100 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • 100 V low-side switching
  • Moderate-current power stages
  • Applications with a 10 V MOSFET gate drive

Avoid if

  • A documented logic-level low-loss performance requirement below 4.5 V gate drive
  • Applications requiring confirmed automotive or safety qualification
  • Designs requiring verified RoHS, REACH, MSL, or lifecycle data

Check before use

  • RDS(on) at the actual gate voltage and operating temperature
  • TO-252 footprint and tab thermal connection
  • Drain-current derating for the actual case and board temperature
  • Avalanche and transient protection requirements

Key specifications

Drain-source voltage
100 V
Continuous drain current
15 A at TC=25 °C
On-resistance
100 mΩ max at VGS=10 V, ID=10 A
Package
TO-252, 3-pin
Gate charge
21 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingIndustrial load controlMotor-control switching

CAD Models

Download ECAD models for DH090NG-S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DH090NG-S is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-252 package. Its drain-source voltage rating is 100 V.