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DH200PG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DH200PG product

DH200PG

FETs

P-channel MOSFET-100 V-12 ATO-252200 mΩ max

DH200PG is a -100 V P-channel MOSFET in TO-252 for power-switching designs requiring up to -12 A continuous drain current at TC=25°C.

Best for

  • P-channel high-side switching
  • Moderate-current power switching
  • TO-252 power designs

Avoid if

  • Very low conduction-loss designs
  • Applications without adequate thermal management
  • Circuits requiring a specified compliance or lifecycle status

Check before use

  • RDS(on) at the available negative gate-drive voltage
  • Case and junction temperature under load
  • TO-252 land pattern and drain tab connection
  • Voltage transient margin below -100 V

Key specifications

Channel type
P-Channel
Drain-source voltage
-100 V
Continuous drain current
-12 A at TC=25°C
Maximum RDS(on)
200 mΩ at VGS=-10 V, ID=-5 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingHigh-side load switching

Datasheet

ee6695c155db6f5744b0db71049ef04c_DH200PG.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DH200PG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DH200PG is a DOINGTER P-channel trench MOSFET in a 3-pin TO-252 package. It has a -100 V drain-source voltage rating and a continuous drain-current rating of -12 A at TC=25°C.